2SK3472 2002-09-04 1 toshiba field effect transistor silicon n channel mos type ( -mos v ) 2SK3472 switching regulator applications low drain-source on resistance: r ds (on) = 4.0 m ? (typ.) high forward transfer admittance: |y fs | = 0.8 s (typ.) low leakage current: i dss = 1 00 a (max) (v ds = 450 v) enhancement-model: v th = 2.0 to 4.0 v (v ds = 1 0 v, i d = 1 ma) maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v dss 450 v drain-gate voltage (r gs 20 k ) v dgr 450 v gate-source voltage v gss 30 v dc (note 1) i d 1 a drain current pulse (note 1) i dp 2 a drain power dissipation (tc 25c) p d 20 w single pulse avalanche energy (note 2) e as 122 mj avalanche current i ar 1 a repetitive avalanche energy (note 3) e ar 2 mj channel temperature t ch 150 c storage temperature range t stg 55 to150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 6.25 c/w thermal resistance, channel to ambient r th (ch-a) 125 c/w note 1: please use devices on condition that the channel temperature is below 150c. note 2: v dd 90 v, t ch 25c (initial), l 203 mh, r g 25 , i ar 1 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita sc-64 toshiba 2-7b1b weight: 0.36 g (typ.)
2SK3472 2002-09-04 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 25 v, v ds 0 v 10 a drain-source breakdown voltage v (br) gss i g 10 a, v ds 0 v 30 v drain cut-off current i dss v ds 450 v, v gs 0 v 100 a drain-source breakdown voltage v (br) dss i d 10 ma, v gs 0 v 450 v gate threshold voltage v th v ds 10 v, i d 1 ma 2.0 4.0 v drain-source on resistance r ds (on) v gs 10 v, i d 0.5 a 4.0 4.6 forward transfer admittance y fs v ds 10 v, i d 0.5 a 0.3 0.8 s input capacitance c iss 180 reverse transfer capacitance c rss 2 output capacitance c oss v ds 25 v, v gs 0 v, f 1 mhz 20 pf rise time t r 7 turn-on time t on 15 fall time t f 30 switching time turn-off time t off 70 ns total gate charge (gate-source plus gate-drain) q g 5 gate-source charge q gs 3 gate-drain (?miller?) charge q gd v dd 360 v, v gs 10 v, i d 1 a 2 nc source-drain ratings and characteristics (ta 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr 1 a pulse drain reverse current (note 1) i drp 2 a forward voltage (diode) v dsf i dr 1 a, v gs 0 v 1.7 v reverse recovery time t rr 350 s reverse recovery charge q rr i dr 1 a, v gs 0 v, di dr /dt 100 a/ s 1.3 c marking type k3472 lot number month (starting from alphabet a) year (last number of the christian era) duty
1%, t w 10 s 0 v 10 v v gs r l 400 v dd 200 v i d 0.5 a v out 10
2SK3472 2002-09-04 3 forward transfer admittance y fs (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) y fs i d drain current i d (a) r ds (on) i d drain-source on resistance r ds (on) ( ) 0 1.0 0.2 0.6 0.4 0.8 2 0 10 4 6 8 common source tc 25c pulse test v gs 4.5 v 5.0 5.25 5.5 5.75 10 8.0 6.0 4.75 0 2.0 0.4 1.2 0.8 1.6 10 0 50 20 30 40 v gs 4.5 v 6.25 5.25 5.5 5.75 6.0 10 common source tc 25c pulse test 8.0 5.0 common source v ds 20 v pulse test 0 2.0 0.4 1.2 0.8 1.6 2 0 10 4 6 8 tc 55c 25 100 0 20 4 12 8 16 4 0 20 8 12 16 0.25 common source tc 25c pulse test 0.5 i d 1 a 0.02 0.1 10 10 3 1 0.1 0.3 0.5 1 3 5 0.3 0.05 0.5 5 common source v ds 20 v pulse test tc 55c 25 100 0.1 1 0.3 0.5 3 5 3 30 10 50 1 v gs 10, 15 v 10 common source tc 25c pulse test 5
2SK3472 2002-09-04 4 drain power dissipation p d (w) gate threshold voltage v th (v) case temperature tc (c) r ds (on) tc drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i dr v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th tc case temperature tc (c) p d tc drain-source voltage v ds (v) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics 0 16 1 8 2 12 40 80 160 0 40 80 common source v gs 10 v pulse test 0.25 i d 1 a 0.5 0.01 10 0.03 0.3 3 0.2 0 1.2 0.6 0.4 0.8 1.0 10 3 1 v gs 0, 1 v 1 0.1 common source pulse test 40 10 20 30 0 0 80 120 200 40 160 500 100 300 200 400 0 0 40 60 80 100 20 common source i d 1 a tc 25c p ulse test 180 v ds 360 v v gs v ds 20 4 12 8 16 0 90 0 40 80 120 160 5 1 3 2 4 0 80 40 common source v ds 10 v i d 1 ma pulse test 10 30 100 1 0.1 100 10 c iss c oss c rss common source v gs 0 v f 1 mhz tc 25c 1 3 50 300 0.3 0.5 3 5 30 50 500 5
2SK3472 2002-09-04 5 10 100 1 m 10 m 100 m 110 0.01 0.03 0.1 1 10 single pulse 0.01 0.02 0.05 0.1 0.2 duty 0.5 t p dm t duty t/t r th (ch-c) 6.25c/w 0.3 3 r th t w safe operating area e as ? t ch drain-source voltage v ds (v) pulse width t w (s) channel temperature (initial) tch (c) normalized transient thermal impedance r th (t) /r th (ch-a) avalanche energy e as (mj) drain current i d (a) 00.1 0.1 0.1 1 10 30 1 10 100 * : single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. i d max (continuous) i d max (pulsed) * dc operation tc 25c 1 ms * v dss max 3 00.3 0.3 100 s * 0 25 30 60 90 150 120 50 75 100 125 150 wave form i ar b vdss v dd v ds r g 25 v dd 90 v, l 203 mh v dd b vdss b vdss 2 i l 2 1 as test circuit 15 v 15 v
2SK3472 2002-09-04 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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